The Silicon Carbide (SiC) market size is expected to reach USD 7.79 Billion in 2030 and register revenue CAGR of 11.4% over the forecast period, according to the latest report by Reports and Data. Increasing demand for SiC devices in power electronics and reduction in size of SiC-enabled devices are the key factors driving market revenue growth over the forecast period.
Increasing demand for cleaner environment, reduction in global warming, and the reduction of dependency on fossil fuels increase demand for hybrid and electric vehicles offering superior fuel efficiency, less emission, and can be digitally well-connected than the traditional vehicles. Demand for SiC devices increases with the surge of demand for electric vehicles (EVs) as they are capable of increasing the efficiency and range of EVs and reducing the weight and size, thus increasing the overall power density of vehicle electronics. The SiC devices are increasingly used in high voltage power converters and their higher thermal conductivity makes them ideal for use in high temperatures with significantly lower on-state resistance and switching losses, thus allowing faster heat dissipation. Furthermore, the energy conversion requirement of EVs is optimally fulfilled by SiC devices which helps to reach maximum efficiency and drive growth of the market.
SiC semiconductors, capable of operating at high temperatures are perfect for applications such as onboard charging and inverters used in the case of electric and hybrid vehicles for rapid charging solutions. They ensure that EVs can operate long distances and get charged within a reasonable timeframe with highest efficiency. In addition, support and initiative from governments of various countries help in development and improvement of this critical technology. For instance, in April 2019, the University of Arkansas received a USD 1.5 Million grant from the US Department of Energy, as an aid for development of next-generation SiC-based power modules designed for hybrid and EVs. The benefit of SiC semiconductors is that it enhances the overall efficiency of EVs by increasing range and reducing the amount of time for getting recharged, is expected to drive growth of the market over the forecast period.
However, the high material and fabrication cost of silicon carbide hampers growth of the market as SiC is manufactured in elevated temperature conditions which makes it costlier than raw silicon material. In addition, the use of gallium nitride as an alternative compound bearing similar properties of bandwidth, energy efficiency, high-temperature sustainability, etc. further hampers growth of the market during the forecast period.
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Some major companies operating in the global market include STMicroelectronics N.V., Infineon Technologies AG, Rohm Co Ltd, Wolfspeed, , ON SemiconductorCorporation, Fuji Electric Co., Ltd., Renesas Electronics Corporation, Microchip Technology Inc., Toshiba Corporation, General Electric Company, GeneSiC Semiconductor Inc., ESD-SIC B.V., Entegris, Inc., Powerex Inc., and SEMI Co. Ltd.
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For this report, Reports and Data has segmented silicon carbide market based on product, device, wafer size, application, end-use, and region.
Device Outlook (Revenue, USD Billion, 2019-2030)
Application Outlook (Revenue, USD Billion, 2019-2030)
Wafer Size Outlook (Revenue, USD Billion, 2019-2030)
Vertical size Outlook (Revenue, USD Billion,2019-2030)
Regional Outlook (Revenue, USD Billion; 2019-2030)
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