GaN Power Devices Market Overview by Increasing Demands and Sales 2023 to 2030 | Fujitsu, Toshiba, Koninklijke Philips

PRESS RELEASE

Published August 23, 2023

The GaN Power Devices Market study also focuses on a comprehensive competition landscape, defined growth possibilities, market share along with product type and applications, important firms in charge of production, and employed tactics. GaN Power Devices market offers data on size, forecast, trends, growth factors, and obstacles. Market analyses and projections are produced by a team of analysts and modelers with extensive experience and expertise. Based on industry trends and the tactics used by the major rivals, the analyses indicate the top countries and segments for opportunities and strategies.

From 2023 to 2030, the Worldwide Gan Power Devices Market is expected to develop at a CAGR of 25.4%, reaching a value of USD 12.47 billion.

The GaN (Gallium Nitride) power devices market has grown dramatically in recent years, driven by rising demand for efficient and high-performance power electronics across a wide range of sectors. In comparison to typical silicon-based devices, GaN power devices represent a technical leap forward, with superior features such as increased electron mobility, quicker switching rates, and enhanced thermal conductivity. Because of these benefits, GaN power devices are ideal for applications that need efficient energy conversion, such as power supply, inverters, electric cars, and renewable energy systems. The requirement for small and lightweight power solutions capable of managing increased power densities and functioning in challenging settings is also driving market growth.

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Vendor Landscape:

Fujitsu, Toshiba, Koninklijke Philips, Texas Instruments, EPIGAN, NTT Advanced Technology, RF Micro Devices, Cree Incorporated, Aixtron, International Quantum Epitaxy (IQE), Mitsubishi Chemical, AZZURO Semiconductors, Efficient Power Conversion (EPC), GaN

Total Market by Segment:

Global GaN Power Devices Market Segment Percentages By Type

600V

Others

Global GaN Power Devices Market Segment Percentages by Application

Server and Other IT Equipments

High-Efficiency and Stable Power Supplies

Rapidly Expanding HEV/EV Devices

GaN Power Devices Market Challenges and Risk

However, despite the market’s great development potential, specific challenges and risks must be identified and addressed proactively. One of the most significant issues is the expense of production. Complex production procedures and the usage of specialist materials in GaN power devices contribute to greater manufacturing costs as compared to standard silicon-based competitors. Breaking down these economic hurdles and attaining economies of scale is critical for greater market acceptance. Another big problem stems from the inherent properties of GaN materials. While GaN power devices have many advantages, they are also more susceptible to environmental variables and electrostatic discharge, which can reduce their dependability and operating longevity. It is critical to ensure the resilience and endurance of GaN power devices under a variety of operating circumstances.

GaN Power Devices Market Regional Analysis:

North America (United States, Canada and Mexico)

Europe (Germany, UK, France, Italy, Russia and Spain etc.)

Asia-Pacific (China, Japan, Korea, India, Australia and Southeast Asia etc.)

South America (Brazil, Argentina and Colombia etc.)

Middle East & Africa (South Africa, UAE and Saudi Arabia etc.)

North America is poised to rule the sector as the GaN Power Devices market expands and changes. North American GaN Power Devices providers are at the forefront of innovation and growth as a result of its technology advancements, strong financial infrastructure, high customer uptake, and market consolidation initiatives. North American businesses are well-positioned to take the lead and influence the future of GaN Power Devices globally as customers depend more and more on digital payments and look for simple ways to transfer money.

Current Forecast, Historic and Base year is as follows:

The latest Forecast year: 2023-2030

Historical Year – 2017-2021

Base Year – 2022

Impact Of COVID 19 On Global GaN Power Devices Market

The beginning of the coronavirus pandemic coincided with a global recession that had a negative influence on many different businesses. The COVID pandemic has not only affected society, but it has also created new economic opportunities for the GaN Power Devices Market. This pandemic has significantly affected the market, the competitive environment, and a mix of the GaN Power Devices Market. Additionally, this market research report studies and quantifies all of these impacts and disruptions.

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Table of Contents – Major Key Points