Power Diamond Systems Unveils Initiation of Diamond MOSFET Complementary Power Inverter Development

PRESS RELEASE
Published December 22, 2023

TOKYO, JAPAN / ACCESSWIRE / December 22, 2023 / Power Diamond Systems, Inc. (PDS, Tokyo, JAPAN, CEO Tatsuya Fujishima), a leading innovator in the research and development of diamond semiconductor power devices and high-frequency solutions, has embarked on the verification of high-speed operation for a complementary power inverter. This inverter integrates p-channel diamond MOSFET, n-channel SiC-MOSFET/ GaN-HEMT technologies, representing a significant stride in the advancement of diamond semiconductor power devices.

In recent years, driven by the escalating demand for energy conservation, including the pursuit of carbon neutrality, many companies are working to enhance the efficiency of inverters. These devices play a crucial role in converting DC power to AC power, contributing to their electrification and energy conservation initiatives.

The challenge of large size and weight is an obstacle to the use of inverters in an expanding range of applications in the future. To address this issue, active research is underway to minimize the size of individual components by increasing the transistor operating frequency to higher speeds, ultimately reducing the overall size and weight of the inverter.

To enhance the speed of inverter operation, proposals include the utilization of wide-bandgap semiconductors capable of high-voltage, high-speed, and low-loss operation, as well as the development of complementary power inverters constructed with both n-channel and p-channel transistors.

In recent years, there has been significant anticipation regarding the miniaturization and weight reduction of inverters achieved through the high-speed operation of complementary power inverters utilizing SiC and GaN. Nevertheless, a notable challenge is present as it proves difficult to manufacture p-channel transistors with performance equivalent to their n-channel counterparts in either of these materials. Diamond semiconductors emerge as the sole material candidates for p-channel wide-bandgap transistors, expected to deliver performance comparable to that of SiC and GaN n-channel transistors.

In this project, PDS has successfully completed the initial verification of a complementary inverter that combines p-channel diamond MOSFETs, n-channel SiC-MOSFETs, and GaN-HEMTs. The verification results demonstrate high-speed operation at a frequency of 100 kHz. Looking ahead, PDS is accelerating collaboration with external partners, aiming to further enhance performance and expedite the development of modular products.

About Power Diamond Systems, Inc.

Power Diamond Systems, Inc. (PDS) is a startup founded to advance the research and development of diamond semiconductor devices, based on the pioneering work of Professor Hiroshi Kawarada, our Chief Scientific Officer, at Waseda University. Diamond semiconductor devices represent the next generation of power semiconductors, with vast potential applications in cutting-edge technologies such as electric vehicles and renewable energy systems. One of our primary objectives is to harness the capabilities of diamond semiconductor devices to create ultra-compact and highly efficient inverter modules. By doing so, we aim to play a pivotal role in realizing the vision of a more energy-efficient society. At Power Diamond Systems, we are committed to contributing to the forefront of innovation and driving advancements in energy conservation for a sustainable future.

CONTACT:

Name: Tatsuya Fujishima
Email: info@powerdiamondsys.com

SOURCE: Power Diamond Systems, Inc.



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