The global Gallium Nitride Semiconductor Devices market size is expected to be worth around US$ 10.42 billion by 2030, according to a new report by Vision Research Reports.
The global Gallium Nitride Semiconductor Devices market size was valued at US$ 3.65 billion in 2020 and is anticipated to grow at a CAGR of 25.5% during forecast period 2021 to 2030.
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Growth Factors
The growing applications of gallium nitride in a wide variety of semiconductor devices are expected to augment the market growth. Additionally, the rapid technological advancements in the performance of GaN-based semiconductors are anticipated to promote market growth further. The demand for wireless communication devices, primarily in defense communication, is expected to drive the demand for gallium nitride semiconductors. Gallium nitride technology is being increasingly implemented for the development of amplifiers widely used in wireless communication, including Class E, Class F, and Class C power amplifiers.
Various aerospace and defense technology companies such as L3Harris Technologies, Inc.; Northrop Grumman Corporation; and BAE Systems are collaborating with government agencies for incorporating gallium nitride semiconductors in the military and radar applications. For instance, in February 2012, Northrop Grumman Corporation opened its Advanced Technology Laboratory for developing gallium nitride semiconductors for critical military programs. The company, along with the U.S. government, has invested more than USD 300 million for developing and integrating GaN semiconductors in military systems for enhancing the capabilities of space, aircraft, and ground defense communication systems. These factors are expected to drive the demand for GaN semiconductors across wireless applications.
Report Highlights
The opto-semiconductors product segment dominated the market in 2020 with a revenue share of over 37% and is expected to witness considerable growth over the next eight years. This can be largely attributed to the application of opto-semiconductors in devices such as LEDs, photodiodes, lasers, and optoelectronics, among others. The automotive sector is increasingly utilizing opto-semiconductors in automotive lights, indoor and outdoor lighting, and pulse-powered laser. This is subsequently propelling the adoption of opto-semiconductors in the automotive and consumer electronics industries. Furthermore, opto-semiconductors are also being widely used in applications such as (LiDAR) and pulsed laser, which bodes well for the growth of the segment.
The transistor segment dominated the market in 2020 with a revenue share of over 46%. In recent years, there has been an increasing adoption of GaN-based power transistors adoption of 4G technology-enabled devices has resulted in elevated demand for high power transistors for base stations used in the telecommunication sector. As compared to silicon-based transistors, GaN-based transistors are efficient and functional at high power density and high switch frequency, which has resulted in a higher share of the transistor segment in 2020.
The 4-inch segment dominated the market in 2020 with a revenue share of over 49%, attributable to the fact that 4-inch wafers are and facilitate large scale production of semiconductor devices. The implementations of 4-inch wafers are rapidly increasing as these wafers overcome the limitations of 2-inch wafers and are widely used in semiconductor product-based industries. Furthermore, the increasing demand for gallium nitride devices with 4-inch wafers in high-power amplifiers, optoelectronics devices, telecom frontends, and high-temperature devices is driving the segment growth. Moreover, the suitability of 4-inch substrate for space communication applications owing to its radiation-hardened properties is anticipated to be a key factor influencing the market growth.
The Information and Communication Technology (ICT) end use segment dominated the market in 2020 with a revenue share of over 33%, which can be primarily attributed to the increasing adoption of the (IoT) technology. IoT devices demand efficient and cost-effective components that facilitate a constant exchange of information. They are also used in data centers, servers, base stations, transmission lines, satellite communication, and base transceiver stations, among others.
The growth of defense and aerospace can be attributed to the increasing applications of GaN technology in the defense & aerospace sector to increase the bandwidth and performance reliability in communications, electronic warfare, and radars, among others. The ICs used in radar boards incorporate GaN that enables efficient navigation, facilitate collision avoidance, and enable real-time air traffic control.
North America dominated the market in 2020 with a revenue share of over 43%, as a result of increasing investments by the defense and aerospace industry in research and development are the key drivers for the regional market growth. The governments in the region are promoting the adoption of energy-efficient devices and are providing contracts to various companies operating in the region.
| Report Coverage | Details |
| Market Size | US$ 10.42 billion by 2030 |
| Growth Rate | CAGR of 25.5% From 2021 to 2030 |
| Base Year | 2020 |
| Forecast Period | 2021 to 2030 |
| Segments Covered | Product, Component, Wafer Size, End-use, Region |
| Companies Mentioned | Cree, Inc., Efficient Power Conversion Corporation, Fujitsu Ltd., GaN Systems, Infineon Technologies AG, NexgenPowerSystems, NXP Semiconductor, Qorvo, Inc., Texas Instruments Incorporated, Toshiba Corporation |
Key Players
- Cree, Inc.
- Efficient Power Conversion Corporation
- Fujitsu Ltd.
- GaN Systems
- Infineon Technologies AG
- NexgenPowerSystems
- NXP Semiconductor
- Qorvo, Inc.
- Texas Instruments Incorporated
- Toshiba Corporation
Market Segmentation
- Product Outlook
- GaN Radio Frequency Devices
- Opto-semiconductors
- Power Semiconductors
- Component Outlook
- Transistor
- Diode
- Rectifier
- Power IC
- Others
- Wafer Size Outlook
- 2-inch
- 4-inch
- 6-inch
- 8-inch
- End-use Outlook
- Automotive
- Consumer Electronics
- Defense & Aerospace
- Healthcare
- Information & Communication Technology
- Industrial & Power
- Others
- Regional Outlook
- North America
- U.S.
- Canada
- Europe
- U.K.
- Germany
- Asia Pacific
- India
- China
- Japan
- Latin America
- Brazil
- Middle East & Africa
- North America
In this study, the years considered to estimate the market size of Gallium Nitride Semiconductor Devices are as follows:
- History Year: 2017-2020
- Base Year: 2021
- Forecast Year 2021 to 2030
Reasons to Purchase this Report:
– Market segmentation analysis including qualitative and quantitative research incorporating the impact of economic and policy aspects
– Regional and country level analysis integrating the demand and supply forces that are influencing the growth of the market.
– Market value USD Million and volume Units Million data for each segment and sub-segment
– Competitive landscape involving the market share of major players, along with the new projects and strategies adopted by players in the past five years
– Comprehensive company profiles covering the product offerings, key financial information, recent developments, SWOT analysis, and strategies employed by the major market players
Key Points Covered in Gallium Nitride Semiconductor Devices Market Study:
- Growth of Gallium Nitride Semiconductor Devices Market in 2021
- Market Estimates and Forecasts (2017-2030)
- Brand Share and Market Share Analysis
- Key Drivers and Restraints Shaping Market Growth
- Segment-wise, Country-wise, and Region-wise Analysis
- Competition Mapping and Benchmarking
- Recommendation on Key Winning Strategies
- COVID-19 Impact on Demand for Gallium Nitride Semiconductor Devices Market and How to Navigate
- Key Product Innovations and Regulatory Climate
- Gallium Nitride Semiconductor Devices Market Consumption Analysis
- Gallium Nitride Semiconductor Devices Market Production Analysis
- Gallium Nitride Semiconductor Devices Market and Management
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